Planarization films for advanced microelectronic applications and devices and methods of production thereof

ABSTRACT

A planarization composition is disclosed herein that comprises: a) a structural constituent; and b) a solvent system, wherein the solvent system is compatible with the structural constituent and lowers the lowers at least one of the intermolecular forces or surface forces components of the planarization composition. A film that includes this planarization composition is also disclosed. In addition, another planarization composition is disclosed herein that comprises: a) a cresol-based polymer compound; and b) a solvent system comprising at least one alcohol and at least one ether acetate-based solvent. A film that includes this planarization composition is also disclosed. A layered component is also disclosed herein that comprises: a) a substrate having a surface topography; and b) a planarization composition or a film such as those described herein, wherein the composition is coupled to the substrate. Methods of forming a planarization compositions are also disclosed herein that comprise: a) providing a structural constituent; b) providing a solvent system, wherein the solvent system is compatible with the structural constituent and lowers at least one of the intermolecular forces or surface forces components of the planarization composition; and c) blending the structural constituent and the solvent system to form a planarization composition. Methods of forming a film are also disclosed that comprise: a) providing a planarization composition such as those disclosed herein; and b) evaporating at least part of the solvent system to form a film.

This application claims priority to U.S. Provisional Application Ser.No. 60/488,484 filed on Jul. 17, 2003 and Patent Cooperation TreatyApplication Serial No. PCT/US03/34347 filed on Oct. 27, 2003, which areboth commonly owned and incorporated herein in their entirety.

FIELD OF THE SUBJECT MATTER

The field of the subject matter is planarization compositions and filmsfor use in microelectronic and semiconductor applications, includingtheir methods of production.

BACKGROUND

To meet the requirements for faster performance, the characteristicdimensions of features of integrated circuit devices have continued tobe decreased. Manufacturing of devices with smaller feature sizesintroduces new challenges in many of the processes conventionally usedin semiconductor fabrication. One of the challenges of producingmicroelectronic devices and using them in various applications is theglobal planarization of a surface having a non-planar surfacetopography.

Planarization of a surface generally comprises utilizing one or both oftwo different actions: a) adding to the surface, or b) subtracting fromthe surface. The action of subtracting from the surface usually meansthat the surface is polished or otherwise physically or chemicallyetched in order to remove any unwanted surface topography andminimize/remove any gaps. The action of adding to the surface usuallymeans adding another layer to the surface topography to fill any gapsand create a smooth surface.

Planarization by addition is not satisfactory where the film thicknessmeasured at the open field area is substantially greater than that atthe surface of the topography. If the film thickness difference betweenthe topography and open field area is too large, a high risk of yieldloss at the final device develops. In addition, planarization byaddition is not satisfactory or desirable if the planarizationcomposition cannot adequately fill gaps on the surface, especially thesmall channels and grooves that are formed on the underlying surface,and in effect leaves small channels that are not filled withplanarization composition at all, but are instead filled with air oranother atmospheric gas.

To this end, it would be desirable to form and utilize a planarizationcomposition that can a) provide a film thickness that, when measured atthe open field area, is not substantially greater than that at thesurface of the topography; b) adequately gap fill in narrow trenches andchannels; c) be formed using conventional structural and solventconstituents; d) withstand incorporation of other composition-modifyingconstituents, such as surfactants; and e) planarize a surface orsubstrate to form a component that can be easily incorporated into anelectronic or semiconductor application.

SUMMARY OF THE SUBJECT MATTER

A planarization composition is disclosed herein that comprises: a) astructural constituent; and b) a solvent system, wherein the solventsystem is compatible with the structural constituent and lowers at leastone of the intermolecular forces or surface forces components of theplanarization composition. A film that includes this planarizationcomposition is also disclosed.

In addition, another planarization composition is disclosed herein thatcomprises: a) a cresol-based polymer compound; and b) a solvent systemcomprising at least one alcohol and at least one ether acetate-basedsolvent. A film that includes this planarization composition is alsodisclosed.

A layered component is also disclosed herein that comprises: a) asubstrate having a surface topography; and b) a planarizationcomposition or a film such as those described herein, wherein thecomposition is coupled to the substrate.

Methods of forming a planarization compositions are also disclosedherein that comprise: a) providing a structural constituent; b)providing a solvent system, wherein the solvent system is compatiblewith the structural constituent and lowers at least one of theintermolecular forces or surface forces components of the planarizationcomposition; and c) blending the structural constituent and the solventsystem to form a planarization composition.

Methods of forming a film are also disclosed that comprise: a) providinga planarization composition such as those disclosed herein; and b)evaporating at least part of the solvent system to form a film.

BRIEF DESCRIPTION OF THE FIGURES & TABLES

FIG. 1 shows a fluid property comparison for two contemplatedplanarization compositions.

FIG. 2 shows structural information for a contemplated planarizationcomposition.

FIG. 3 shows structural information for a contemplated planarizationcomposition.

FIG. 4 shows planarization performance of a contemplated planarizationcomposition.

FIG. 5 shows planarization performance of a contemplated planarizationcomposition.

FIG. 6 shows planarization performance of a contemplated planarizationcomposition.

FIG. 7 shows planarization performance of a contemplated planarizationcomposition.

FIG. 8 shows plasma etch rates of a contemplated planarizationcomposition.

FIG. 9 shows fill and planarization data for a contemplatedplanarization composition.

FIG. 10 shows fill and planarization data for a contemplatedplanarization composition.

FIG. 11 shows profilometer results for a contemplated planarizationcomposition.

Table 1 shows the structural information for the composition once thestarting composition has been deposited onto a surface or wafer andbaked and/or cured.

Table 2 shows the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 3 shows the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 4 shows show the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 5 shows the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 6 shows the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 7 shows the planarization performance for the Accuflo™ 2025composition tested in two different laboratories.

Table 8 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 9 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 10 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 11 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 12 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 13 shows the planarization performance for the Accuflo™ 2027composition tested in two different laboratories.

Table 14 shows the TMAH solvent resistance of the Accuflo™ 2027 whenbaked at about 160° C. to about 230° C. for about 90 seconds in ambientair.

Table 15 shows a planarization comparison between two contemplatedcompositions.

Table 16 shows the SEM cross section results for contemplated compounds.

Table 17 shows the BOE etch results for this same composition shown inTable 16.

DETAILED DESCRIPTION

As described herein, a planarization composition has been developed andutilized that comprises at least one of the following goals andadvantages: a) provides a film thickness that, when measured at the openfield area, is not substantially greater than that at the surface of thetopography; b) adequately gap fills in narrow trenches and channels; c)is formed using conventional structural and solvent constituents; d)withstands incorporation of other composition-modifying constituents,such as surfactants; and e) planarizes a surface or substrate to form acomponent that can be easily incorporated into an electronic orsemiconductor application.

In contemplated embodiments, a planarization composition comprises astructural constituent and a solvent system, wherein the solvent systemis compatible with the structural constituent and effectively lowers atleast one of the intermolecular forces or surface forces components ofthe planarization composition. In additional contemplated embodiments,the planarization composition may further comprise acomposition-modifying constituent, such as a surfactant.

The structural constituent of the planarization composition may compriseany suitable monomer, polymer, moiety or compound that is suitable as aplanarization material for electronic and semiconductor applications.These monomers, polymers, moieties or compounds can comprise organic,inorganic or organometallic moieties. Examples of contemplated inorganiccompounds are silicates, siloxanes, silazanes, aluminates and compoundscontaining transition metals. Examples of organic compounds includepolyarylene ether, polyimides, adamantane molecules, branched adamantanestructures, novolac-based polymers and polyesters. Examples ofcontemplated organometallic compounds include poly(dimethylsiloxane),poly(vinylsiloxane) and poly(trifluoropropylsiloxane).

As used herein, the term “monomer” refers to any chemical compound thatis capable of forming a covalent bond with itself or a chemicallydifferent compound in a repetitive manner. The repetitive bond formationbetween monomers may lead to a linear, branched, super-branched, orthree-dimensional product. Furthermore, monomers may themselves compriserepetitive building blocks, and when polymerized the polymers formedfrom such monomers are then termed “blockpolymers”. Monomers may belongto various chemical classes of molecules including organic,organometallic or inorganic molecules. The molecular weight of monomersmay vary greatly between about 40 Dalton and 20000 Dalton. However,especially when monomers comprise repetitive building blocks, monomersmay have even higher molecular weights. Monomers may also includeadditional groups, such as groups used for crosslinking.

One of the planarization compositions that experiences some problemswhen comparing the film thickness measured at the open field area tothat at the surface of the topography is the planarization compositionthat comprises a novolac-based polymer. Novolac-based polymer solutionscontemplated herein are those disclosed in U.S. Pat. Nos. 6,506,831;6,506,441; 6,517,951; U.S. patent application Ser. No. 10/299,127 andrelated and corresponding foreign and PCT applications, includingPCT/US99/30296, which are all incorporated herein in their entirety andare commonly owned and assigned to Honeywell International Inc. Othercontemplated novolac-based polymer solutions are those disclosed in thefollowing references: Rahman et al. (U.S. Pat. No. 5,853,954 and U.S.Pat. No. 5,910,559); Malik et al. (U.S. Pat. No. 6,027,853); Allen etal. (SPIE Vol. 2438, pp. 250-260); Tsiartas et al. (SPIE Vol. 2438, pp.261-271) or Sizensky et al. (U.S. Pat. No. 5,413,894), which are allincorporated herein by reference. Another class of compositions that arecontemplated herein are resol-type phenolic resins. It should beunderstood that any of the planarization compositions discussed hereinmay be combined with one another to form another planarizationcomposition. For example, a novolac-based polymer may be combined with aresol-type phenolic resin to form a planarization composition. It shouldbe understood that planarization improves as the structure of themolecular approaches a linear or straight-chained configuration.Branched or crosslinked molecules and compounds can be utilized in aplanarization composition, but it should be understood that as themolecules and compounds become larger (from a molecular weight sense)and more complex (from a branched/crosslinked sense) that the successfulplanarization of a surface may begin to suffer.

Solutions of organohydridosiloxane and organosiloxane resins can also beutilized for forming planarization compositions and also in thefabrication of a variety of electronic devices, micro-electronicdevices, particularly semiconductor integrated circuits and variouslayered materials for electronic and semiconductor components, includinghardmask layers, dielectric layers, etch stop layers and buried etchstop layers. These organohydridosiloxane resin layers are quitecompatible with other materials that might be used for layered materialsand devices, such as adamantane-based compounds, diamantane-basedcompounds, silicon-core compounds, organic dielectrics, and nanoporousdielectrics. Compounds that are considerably compatible with theorganohydridosiloxane resin planarization layers contemplated herein aredisclosed in PCT Application PCT/US01/32569 filed Oct. 17, 2001; PCTApplication PCT/US01/50812 filed Dec. 31, 2001; U.S. application Ser.No. 09/538,276; U.S. application Ser. No. 09/5/14504; U.S. applicationSer. No. 09/587,851; U.S. Pat. No. 6,214,746; U.S. Pat. No. 6,171,687;U.S. Pat. No. 6,172,128; U.S. Pat. No. 6,156,812, U.S. Application Ser.No. 60/350,187 filed Jan. 15, 2002; and U.S. 60/347,195 filed Jan. 8,2002, which are all incorporated herein by reference in their entirety.

Organohydridosiloxane resins utilized herein have the following generalformulas:[H—Si_(1.5)]_(n)[R—SiO_(1.5)]_(m)  Formula (1)[H_(0.5)—Si_(1.5-1.8)]_(n)[R_(0.5-1.0)—SiO_(1.5-1.8)]_(m)  Formula (2)[H_(0-1.0)—Si_(1.5-1.8)]_(n)[R_(0.5-1.0)—SiO_(1.5-1.8)]_(m)  Formula (3)[H—Si_(1.5)]_(x)[R—SiO_(1.5)]_(y)[SiO₂]_(z)  Formula (4)wherein:

the sum of n and m, or the sum or x, y and z is from about 8 to about5000, and m or y is selected such that carbon containing constituentsare present in either an amount of less than about 40 percent (LowOrganic Content=LOSP) or in an amount greater than about 40 percent(High Organic Content=HOSP); R is selected from substituted andunsubstituted, normal and branched alkyls (methyl, ethyl, butyl, propyl,pentyl), alkenyl groups (vinyl, allyl, isopropenyl), cycloalkyls,cycloalkenyl groups, aryls (phenyl groups, benzyl groups, naphthalenylgroups, anthracenyl groups and phenanthrenyl groups); and mixturesthereof; and wherein the specific mole percent of carbon containingsubstituents is a function of the ratio of the amounts of startingmaterials. In some LOSP embodiments, particularly favorable results areobtained with the mole percent of carbon containing substituents beingin the range of between about 15 mole percent to about 25 mole percent.In some HOSP embodiments, favorable results are obtained with the molepercent of carbon containing substituents are in the range of betweenabout 55 mole percent to about 75 mole percent.

The phrases “cage structure”, “cage molecule”, and “cage compound” areintended to be used interchangeably and refer to a molecule having atleast 10 atoms arranged such that at least one bridge covalentlyconnects two or more atoms of a ring system. In other words, a cagestructure, cage molecule or cage compound comprises a plurality of ringsformed by covalently bound atoms, wherein the structure, molecule orcompound defines a volume, such that a point located with the volume cannot leave the volume without passing through the ring. The bridge and/orthe ring system may comprise one or more heteroatoms, and may bearomatic, partially saturated, or unsaturated. Further contemplated cagestructures include fullerenes, and crown ethers having at least onebridge. For example, an adamantane or diamantane is considered a cagestructure, while a naphthalene or an aromatic spirocompound are notconsidered a cage structure under the scope of this definition, becausea naphthalene or an aromatic spirocompound do not have one, or more thanone bridge.

Contemplated cage compounds need not necessarily be limited to beingcomprised solely of carbon atoms, but may also include heteroatoms suchas N, S, O, P, etc. Heteroatoms may advantageously introducenon-tetragonal bond angle configurations. With respect to substituentsand derivatizations of contemplated cage compounds, it should berecognized that many substituents and derivatizations are appropriate.For example, where the cage compounds are relatively hydrophobic,hydrophilic substituents may be introduced to increase solubility inhydrophilic solvents, or vice versa. Alternatively, in cases wherepolarity is desired, polar side groups may be added to the cagecompound. It is further contemplated that appropriate substituents mayalso include thermolabile groups, nucleophilic and electrophilic groups.It should also be appreciated that functional groups may be employed inthe cage compound (e.g., to facilitate crosslinking reactions,derivatization reactions, etc.) Where the cage compounds arederivatized, it is especially contemplated that derivatizations includehalogenation of the cage compound, and a particularly preferred halogenis fluorine.

Cage molecules or compounds, as described in detail herein, can also begroups that are attached to a polymer backbone, and therefore, can formnanoporous materials where the cage compound forms one type of void(intramolecular) and where the crosslinking of at least one part of thebackbone with itself or another backbone can form another type of void(intermolecular). Additional cage molecules, cage compounds andvariations of these molecules and compounds are described in detail inPCT/US01/32569 filed on Oct. 18, 2001, which is herein incorporated byreference in its entirety.

In order to improve the gap-filling and planarization abilities of acomposition that comprises monomers or other non-polymer species and/ora polymeric constituent, the composition should be modified in order tomodify the viscosity, the surface forces component and/or theintermolecular forces component of the planarization composition, suchas the surface energy of the composition. In several cases, it isbeneficial to lower both the viscosity and the intermolecular forcesconstituent in order to optimize the gap-filling and planarizationproperties. One way to modify the planarization composition is to modifyand/or replace the solvent system, wherein the solvent system whereinthe system is compatible with the structural constituent and lowers atleast one of the intermolecular forces or surface forces components ofthe planarization composition to which it is added. In some contemplatedembodiments, the solvent system comprises at least two solvents.

For example, in a novolac-based polymeric solution, a stronglyhydrogen-bonding solvent is used to dissolve the surfactant that isadded to the polymeric solution. In one instance, the stronglyhydrogen-bonding solvent is ethyl lactate and the surfactant is afluoroaliphatic polymeric ester surfactant. For this case, the stronglyhydrogen-bonding solvent can be replaced by a co-solvent systemcomprising an alcohol, such as 2-propanol and propylene glycol methylether acetate (PGMEA). Utilizing to the Hildebrand and Hansen solubilityparameters, it is believed that the solubility of fluoroaliphaticpolymeric ester surfactant in 2-propanol is similar to that of PGMEA,however, superior to ethyl lactate. In addition, 2-propanol possessesweaker intermolecular forces and lower surface tension than ethyllactate. The capillary flow in narrow trenches is affected by themolecular structure and associated electrical charge. Representingintegral effects of surface forces, the apparent viscosity of moderatelypolar 2-propanol decreases from its nominal value at narrow trenchregime, where the ratio between apparent and nominal viscosity for ethyllactate is larger than that of 2-propanol. Addition of PGMEA to2-propanol in the co-solvent system for the surfactant reduces theevaporation rate difference between 2-propanol and bulk PGMEA used forcresol-novolac resin dilution. In contemplated embodiments, the solventsystem lowers the apparent viscosity by at least about 10%. In othercontemplated embodiments, the solvent system lowers the apparentviscosity by at least about 20%. In yet other contemplated embodiments,the solvent system lowers the apparent viscosity by at least about 30%.

As used herein, the phrase “apparent viscosity” means the characteristicof fluid's internal resistance to flow and which equals the ratio ofstress to the rate of strain. In submicron trenches, the apparentviscosity represents the integral effect of surface forces and usuallydecreases from the nominal viscosity due to the size effect where theratio between surface force and body force is large. Also as usedherein, the phrase “nominal viscosity” means that viscosity that is thebulk fluid property determined from a commercially available viscometer,such as a Brookfield viscometer, and is calculated from measurements offorces and velocities when liquid is Newtonian.

Contemplated solvents to be utilized in the solvent system are thosementioned earlier along with those that include any suitable pure ormixture of organic molecules that are volatilized at a desiredtemperature and/or easily solvates the chosen surfactants, polymersand/or other molecules discussed herein. Contemplated solvents are alsothose solvents that can, alone or in combination, modify the viscosity,intermolecular forces and surface energy of the solution in order toimprove the gap-filling and planarization properties. The solvent mayalso comprise any suitable pure or mixture of polar and non-polarcompounds. As used herein, the term “pure” means that component that hasa constant composition. For example, pure water is composed solely ofH₂O. As used herein, the term “mixture” means that component that is notpure, including salt water. As used herein, the term “polar” means thatcharacteristic of a molecule or compound that creates an unequal charge,partial charge or spontaneous charge distribution at one point of oralong the molecule or compound. As used herein, the term “non-polar”means that characteristic of a molecule or compound that creates anequal charge, partial charge or spontaneous charge distribution at onepoint of or along the molecule or compound.

In some contemplated embodiments, the solvent or solvent mixture maycomprise those solvents that are not considered part of the hydrocarbonsolvent family of compounds, such as ketones, such as acetone, diethylketone, methyl ethyl ketone and the like, alcohols (branched andstraight chain, such as 2-propanol or 1-propanol), esters, ethers, etheracetates and amines. In yet other contemplated embodiments, the solventor solvent mixture may comprise a combination of any of the solventsmentioned herein.

In other contemplated embodiments, the solvent or solvent mixture(comprising at least two solvents) comprises those solvents that areconsidered part of the hydrocarbon family of solvents. Hydrocarbonsolvents are those solvents that comprise carbon and hydrogen. It shouldbe understood that a majority of hydrocarbon solvents are non-polar;however, there are a few hydrocarbon solvents that could be consideredpolar. Hydrocarbon solvents are generally broken down into threeclasses: aliphatic, cyclic and aromatic. Aliphatic hydrocarbon solventsmay comprise both straight-chain compounds and compounds that arebranched and possibly crosslinked, however, aliphatic hydrocarbonsolvents are not considered cyclic. Cyclic hydrocarbon solvents arethose solvents that comprise at least three carbon atoms oriented in aring structure with properties similar to aliphatic hydrocarbonsolvents. Aromatic hydrocarbon solvents are those solvents that comprisegenerally three or more unsaturated bonds with a single ring or multiplerings attached by a common bond and/or multiple rings fused together.Contemplated hydrocarbon solvents include toluene, xylene, p-xylene,ma-xylene, mesitylene, solvent naphtha H, solvent naphtha A, alkanes,such as pentane, hexane, isohexane, heptane, nonane, octane, dodecane,2-methylbutane, hexadecane, tridecane, pentadecane, cyclopentane,2,2,4-trimethylpentane, petroleum ethers, halogenated hydrocarbons, suchas chlorinated hydrocarbons, nitrated hydrocarbons, benzene,1,2-dimethylbenzene, 1,2,4-trimethylbenzene, mineral spirits, kerosine,isobutylbenzene, methylnaphthalene, ethyltoluene, ligroine. Particularlycontemplated solvents include, but are not limited to, pentane, hexane,heptane, cyclohexane, benzene, toluene, xylene and mixtures orcombinations thereof.

As used herein, the phrase “intermolecular forces” means those bondingor non-bonding forces, such as Van der Waals, electrostatic, steric,coulombic, hydrogen bonding, ionic, covalent, dipole-dipole, dispersion,magnetic attraction and combinations thereof, that take place betweentwo or more parts of matter or components, such as a planarizationcomposition and a surface, a planarization composition and another layerof material, molecules that make up the planarization composition,combinations thereof and so on. When lowering the intermolecular forcesof a planarization composition, it is important to use a “reference”planarization composition, such as the one described above consisting ofa novolac-based polymer, ethyl lactate and a surfactant. When thesolvent system of the reference planarization composition is replaced,such as that described above comprising 2-propanol and PGMEA, theintermolecular forces are lowered and the planarization composition isnot detrimentally and strongly attracted to the surface of the substrateor to other molecules. In this case, the planarization composition isfree to migrate into the narrow gaps and trenches that make up thesurface topography. It should be understood that the referencecomposition may comprise any combination of structural constituents andsolvent systems. It should be further understood that whatever referenceplanarization composition is chosen, a compatible solvent system may beeasily developed using the disclosure herein to lower the intermolecularforces component of the composition.

In some embodiments, a surface forces component, such as an interfacialsurface tension, is created by the planarization composition and theinteraction of the planarization composition with the surface, substrateor wafer. Solvent systems contemplated herein can lower the interfacialsurface tension by at least about 10% when compared to a conventionalplanarization composition known to one of ordinary skill in the art oflayered materials. In some embodiments, the solvent system can lower theinterfacial surface tension by at least about 20% when compared to aconventional planarization composition. In yet other embodiments, thesolvent system can lower the interfacial surface tension by at leastabout 30% when compared to a conventional planarization composition.

As mentioned earlier, in additional contemplated embodiments, theplanarization composition may further comprise at least onecomposition-modifying constituent, such as a surfactant. Contemplatedsurfactants include hydrocarbon-based (non-fluorinated) andfluorocarbon-based surfactants or a combination thereof. Ascontemplated, the at least one fluorocarbon-type surfactant may compriseat least one fluoroaliphatic polymeric ester surfactant. Suitablenon-fluorinated surfactants are those found in U.S. Pat. Nos. 5,858,547and 6,517,951 issued to Hacker et al., which are commonly-owned,assigned and incorporated herein by reference in their entirety. Othercomposition-modifying constituents may comprise at least one adhesionpromoter, pH tuning agent, porogen or any other suitablecomposition-modifying agent depending on the needs and specifications ofthe film, the component and/or the vendor.

There are several characteristics of a suitable planarization film thatare both desirable and contemplated herein. A contemplatedcharacteristic of the composition is the polydispersity of thecomposition. Polydispersity is the ratio of weight-average molecularweight (Mw) to number-average molecular weight (Mn). Therefore, thecloser the weight-average molecular weight is to the number-averagemolecular weight, the closer the polydispersity is to 1, which is thelowest polydispersity number possible. As polydispersity approaches 1,the constituents in the composition are closer in molecular weight withlittle variation in the range of molecular weights in the composition.It has been found that constituents that are not the same or near thesame molecular weight as the structural constituent can greatlyinfluence the properties of the film and component incorporating thatfilm. For example, the presence of low-molecular weight constituents inthe composition (less than 350 amu) can cause fuming and/or smoking andfilm degradation upon baking and curing of the film. In contemplatedembodiments, the polydispersity is less than about 3. In othercontemplated embodiments, the polydispersity is less than about 2.5. Inyet other contemplated embodiments, the polydispersity is less thanabout 2. And in additional contemplated embodiments, the polydispersityis less than about 1.5.

The planarization compositions described herein may be used to formfilms. One method of forming a film comprises: a) providing at least oneplanarization composition disclosed herein, wherein the planarizationcomposition comprises a solvent system; and b) evaporating at least partof the solvent system to form a film. Any suitable procedure orcondition may be used to remove or at least partially remove the solventsystem, including continuous sources, such as heat, dissolution insolvents, preferential etching, exposure to radiation, electromagneticradiation, such as ultraviolet, x-ray, point sources, such as a laser,or infrared radiation; mechanical energy, such as sonication or physicalpressure; or particle radiation, such as gamma ray, alpha particles,neutron beam or electron beam as taught by commonly owned patentpublication PCT/US96/08678 and U.S. Pat. Nos. 6,042,994; 6,080,526;6,177,143; and 6,235,353, which are commonly owned and incorporatedherein by reference in their entireties.

As a contemplated use or application, a layered component is alsocontemplated herein and comprises: a substrate having a surfacetopography; a planarization solution and/or film as described herein,wherein the film and/or material is coupled to the substrate; andoptionally at least one additional layer of material or film.Contemplated coating materials, coating solutions and films can beutilized are useful in the fabrication of a variety of electronicdevices, micro-electronic devices, particularly semiconductor integratedcircuits and various layered materials for electronic and semiconductorcomponents, including hardmask layers, dielectric layers, etch stoplayers and buried etch stop layers. These coating materials, coatingsolutions and films are quite compatible with other materials that mightbe used for layered materials and devices, such as adamantane-basedcompounds, diamantane-based compounds, silicon-core compounds, organicdielectrics, and nanoporous dielectrics. Compounds that are considerablycompatible with the coating materials, coating solutions and filmscontemplated herein are disclosed in PCT Application PCT/US01/32569filed Oct. 17, 2001; PCT Application PCT/US01/5081.2 filed Dec. 31,2001; U.S. application Ser. No. 09/538,276; U.S. application Ser. No.09/544,504; U.S. application Ser. No. 09/587,851; U.S. Pat. No.6,214,746; U.S. Pat. No. 6,171,687; U.S. Pat. No. 6,172,128; U.S. Pat.No. 6,156,812, U.S. Application Ser. No. 60/350,187 filed Jan. 15, 2002;and U.S. 60/347,195 filed Jan. 8, 2002, which are all incorporatedherein by reference in their entirety.

Surfaces contemplated herein may comprise any desirable substantiallysolid material, such as a substrate, wafer or other suitable surface.Some contemplated surfaces comprise a non-planar surface topography andother contemplated surfaces have already been planarized. Particularlydesirable substrate layers would comprise films, glass, ceramic,plastic, metal or coated metal, or composite material. Surface and/orsubstrate layers comprise at least one layer and in some instancescomprise a plurality of layers. In preferred embodiments, the substratecomprises a silicon or germanium arsenide die or wafer surface, apackaging surface such as found in a copper, silver, nickel or goldplated leadframe, a copper surface such as found in a circuit board orpackage interconnect trace, a via-wall or stiffener interface (“copper”includes considerations of bare copper and its oxides), a polymer-basedpackaging or board interface such as found in a polyimide-based flexpackage, lead or other metal alloy solder ball surface, glass andpolymers such as polyimide. In more preferred embodiments, the substratecomprises a material common in the integrated circuit industries as wellas the packaging and circuit board industries such as silicon, copper,glass, and another polymer. Suitable surfaces contemplated herein mayalso include another previously formed layered stack, other layeredcomponent, or other component altogether. An example of this may bewhere a dielectric material and CVD barrier layer are first laid down asa layered stack—which is considered the “surface” for the subsequentlyspun-on layered component.

At least one layer is coupled to the surface or substrate. As usedherein, the term “coupled” means that the surface and layer or twolayers are physically attached to one another or there's a physicalattraction between two parts of matter or components, including bondforces such as covalent and ionic bonding, and non-bond forces such asVan der Waals, electrostatic, coulombic, hydrogen bonding and/ormagnetic attraction. Also, as used herein, the term coupled is meant toencompass a situation where the surface and layer or two layers aredirectly attached to one another, but the term is also meant toencompass the situation where the surface and the layer or plurality oflayers are coupled to one another indirectly—such as the case wherethere's an adhesion promoter layer between the surface and layer orwhere there's another layer altogether between the surface and layer orplurality of layers.

Contemplated dielectric and low dielectric materials compriseinorganic-based compounds, such as silicon-based disclosed in commonlyassigned U.S. Pat. No. 6,143,855 and pending U.S. Ser. No. 10/078,919filed Feb. 19, 2002; (for example Honeywell NANOGLASS® and HOSP®products), gallium-based, germanium-based, arsenic-based, boron-basedcompounds or combinations thereof, and organic-based compounds, such aspolyethers, polyarylene ethers disclosed in commonly assigned U.S. Pat.No. 6,124,421 (such as Honeywell FLARE™ product), polyimides, polyestersand adamantane-based or cage-based compounds disclosed in commonlyassigned WO 01/78110 and WO 01/08308 (such as Honeywell GX-3™ product).The dielectric and low dielectric materials may be applied by spincoating the material on to the surface, rolling the material on to thesurface, dripping the material on to the surface, and/or spreading thematerial on to the surface.

Nanoporous silica dielectric films with dielectric constants rangingfrom 1.5 to about 3.8 can be also as at least one of the layers.Nanoporous silica compounds contemplated herein are those compoundsfound in U.S. Pat. Nos. 6,022,812; 6,037,275; 6,042,994; 6,048,804;6,090,448; 6,126,733; 6,140,254; 6,204,202; 6,208,041; 6,318,124 and6,319,855. These types of films are laid down as a silicon-basedprecursor, aged or condensed in the presence of water and heatedsufficiently to remove substantially all of the porogen and to formvoids in the film. The silicon-based precursor composition comprisesmonomers or prepolymers that have the formula: R_(x)—Si-L_(y), wherein Ris independently selected from alkyl groups, aryl groups, hydrogen andcombinations thereof, L is an electronegative moiety, such as alkoxy,carboxy, amino, amido, halide, isocyanato and combinations thereof, x isan integer ranging from 0 to about 2, and y is an integer ranging fromabout 2 to about 4. Other nanoporous compounds and methods can be foundin U.S. Pat. Nos. 6,156,812; 6,171,687; 6,172,128; 6,214,746; 6,313,185;6,380,347; and 6,380,270, which are incorporated herein in theirentirety.

The layered component contemplated herein may also comprise a diffusionblocking material that is not on the component in the form of a layer,but is instead being used to “block” any individual pores/voids and notto cover the entire underlying layer. In some embodiments, the diffusionblocking material will react with the underlying low k dielectricmaterial or layer and in other embodiments. The diffusion blockingmaterial will not be reactive with the underlying low k dielectricmaterial or layer. In other embodiments the diffusion blocking layeredcomponent contemplated may consist of a densified layer of the low kmaterial or contain phase separated elements of the low k materialdensified in such a manner as to block diffusion of species. Diffusionblocking materials, such as those contemplated herein, can be found incommonly-owned U.S. Provisional Application 60/385,482 filed on Jun. 3,2002, which is incorporated herein in its entirety.

Other spin-on materials may be utilized in additional layers of thelayered component. Several of the contemplated spin-on materials aredescribed in the following issued patents and pending applications,which are herein incorporated by reference in their entirety:(PCT/US00/15772 filed Jun. 8, 2000; U.S. application Ser. No. 09/330,248filed Jun. 10, 1999; U.S. application Ser. No. 09/491,166 filed Jun. 10,1999; U.S. Pat. No. 6,365,765 issued on Apr. 2, 2002; U.S. Pat. No.6,268,457 issued on Jul. 31, 2001; U.S. application Ser. No. 10/001,143filed Nov. 10, 2001; U.S. application Ser. No. 09/491,166 filed Jan. 26,2000; PCT/US00/00523 filed Jan. 7, 1999; U.S. Pat. No. 6,177,199 issuedJan. 23, 2001; U.S. Pat. No. 6,358,559 issued Mar. 19, 2002; U.S. Pat.No. 6,218,020 issued Apr. 17, 2001; U.S. Pat. No. 6,361,820 issued Mar.26, 2002; U.S. Pat. No. 6,218,497 issued Apr. 17, 2001; U.S. Pat. No.6,359,099 issued Mar. 19, 2002; U.S. Pat. No. 6,143,855 issued Nov. 7,2000; and U.S. application Ser. No. 09/611,528 filed Mar. 20, 1998).

As used herein, the term “metal” means those elements that are in thed-block and f-block of the Periodic Chart of the Elements, along withthose elements that have metal-like properties, such as silicon andgermanium. As used herein, the phrase “d-block” means those elementsthat have electrons filling the 3d, 4d, 5d, and 6d orbitals surroundingthe nucleus of the element. As used herein, the phrase “f-block” meansthose elements that have electrons filling the 4f and 5f orbitalssurrounding the nucleus of the element, including the lanthanides andthe actinides. Preferred metals include indium, silver, copper,aluminum, tin, bismuth, gallium and alloys thereof, silver coatedcopper, and silver coated aluminum. The term “metal” also includesalloys, metal/metal composites, metal ceramic composites, metal polymercomposites, as well as other metal composites. As used herein, the term“compound” means a substance with constant composition that can bebroken down into elements by chemical processes.

Additional layers of material may be coupled to the layered component inorder to continue building a layered component or printed circuit board.It is contemplated that the additional layers will comprise materialssimilar to those already described herein, including metals, metalalloys, composite materials, polymers, monomers, organic compounds,inorganic compounds, organometallic compounds, resins, adhesives andoptical wave-guide materials.

A layer of laminating material or cladding material can be coupled tothe layered interface materials depending on the specifications requiredby the component. Laminates are generally considered fiber-reinforcedresin dielectric materials. Cladding materials are a subset of laminatesthat are produced when metals and other materials, such as copper, areincorporated into the laminates. (Harper, Charles A., ElectronicPackaging and Interconnection Handbook, Second Edition, McGraw-Hill (NewYork), 1997.)

Spin-on layers and materials may also be added to the layered interfacematerials or subsequent layers. Spin-on stacked films are taught byMichael E. Thomas, “Spin-On Stacked Films for Low k_(eff) Dielectrics”,Solid State Technology (July 2001), incorporated herein in its entiretyby reference.

Examples of other additional layers of materials comprise metals (suchas those which might be used to form via fills or printed circuits andalso those included in U.S. Pat. Nos. 5,780,755; 6,113,781; 6,348,139and 6,332,233 all of which are incorporated herein in their entirety),metal diffusion layers, mask layers, anti-reflective coatings layers,adhesion promoter layers and the like.

The compounds, coatings, films, materials and the like described hereinmay be used to become a part of, form part of or form an electroniccomponent and/or semiconductor component. As used herein, the term“electronic component” also means any device or part that can be used ina circuit to obtain some desired electrical action. Electroniccomponents contemplated herein may be classified in many different ways,including classification into active components and passive components.Active components are electronic components capable of some dynamicfunction, such as amplification, oscillation, or signal control, whichusually requires a power source for its operation. Examples are bipolartransistors, field-effect transistors, and integrated circuits. Passivecomponents are electronic components that are static in operation, i.e.,are ordinarily incapable of amplification or oscillation, and usuallyrequire no power for their characteristic operation. Examples areconventional resistors, capacitors, inductors, diodes, rectifiers andfuses.

Electronic components contemplated herein may also be classified asconductors, semiconductors, or insulators. Here, conductors arecomponents that allow charge carriers (such as electrons) to move withease among atoms as in an electric current. Examples of conductorcomponents are circuit traces and vias comprising metals. Insulators arecomponents where the function is substantially related to the ability ofa material to be extremely resistant to conduction of current, such as amaterial employed to electrically separate other components, whilesemiconductors are components having a function that is substantiallyrelated to the ability of a material to conduct current with a naturalresistivity between conductors and insulators. Examples of semiconductorcomponents are transistors, diodes, some lasers, rectifiers, thyristorsand photosensors.

Electronic components contemplated herein may also be classified aspower sources or power consumers. Power source components are typicallyused to power other components, and include batteries, capacitors,coils, and fuel cells. Power consuming components include resistors,transistors, integrated circuits (ICs), sensors, and the like.

Still further, electronic components contemplated herein may also beclassified as discreet or integrated. Discreet components are devicesthat offer one particular electrical property concentrated at one placein a circuit. Examples are resistors, capacitors, diodes, andtransistors. Integrated components are combinations of components thatthat can provide multiple electrical properties at one place in acircuit. Examples are integrated circuits in which multiple componentsand connecting traces are combined to perform multiple or complexfunctions such as logic.

EXAMPLES Example 1

About 1 gram of fluoroaliphatic polymeric ester surfactant was dissolvedat room temperature and pressure in a co-solvent of about 4.5 grams ofpropylene glycol monomethyl ether acetate (PGMEA) and about 4.5 grams of2-propanol. About 10 grams of low molecular weight cresol novolac-basedresin (MW=about 1500, Mn=800) was dissolved under ambient conditions inabout 15 grams propylene glycol monomethyl ether acetate. A loading ofabout 5% in weight of such fluoroaliphatic polymeric ester surfactantsolution is added to low-molecular weight, low polydispersity cresolnovolac-based resin solution and further diluted with about 10 grams ofpropylene glycol monomethyl ether acetate. This formulated mixture isapplied to patterned substrate by spin coating.

Subsequent to propylene glycol monomethyl ether acetatesurface-conditioning, the nozzle moves from wafer edge to center and thesolution is radially applied to the substrate, which is then spun atgradually increased speeds ranging from about 100 RPM to about 2500 RPM.The coated substrate is placed in two hot plates at a temperature ofabout 160° C. and about 200° C. for about 90 seconds each.

By using these modified polymeric solutions, the thickness differencebetween the topography and open field area has been significantlyreduced and 50% improvement in film planarization property has beenachieved.

Example 2

About 106.2 g of a low molecular weight (1500 amu) o-cresol novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 7.47 g propylene glycol methyl etheracetate and 7.47 g 2-propanol, was added under ambient conditions to265.5 g of the cresol novolac polymer solution. The resulting polymericsolution was then dispensed onto an patterned test wafer, was dispensedfrom wafer edge to center and spun at gradually increased speeds rangingfrom 100 RPM to 2500 RPM. The coated substrate is placed in two hotplates at a temperature of about 160 C and about 200 C for about 90seconds.

The average film thickness measured was 2.03 micrometers, with astandard deviation of 28 nanometers (0.68% of the average thickness).The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 600 nanometers at wafer center.

Example 3 Comparative

About 106.2 g of a low molecular weight (1500 amu) o-cresol novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 14.9 g ethyl lactate, was added underambient conditions to 265.5 g of the cresol novolac polymer solution.The resulting polymeric solution was then dispensed onto an patternedtest wafer, was dispensed from wafer edge to center and spun atgradually increased speeds ranging from 100 RPM to 2500 RPM. The coatedsubstrate is placed in two hot plates at a temperature of about 160 Cand about 200 C for about 90 seconds.

The average film thickness measured was 2.05 micrometers, with astandard deviation of 18 nanometers (0.44% of the average thickness).The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 1200 nanometer at wafer center.

Example 4 Comparative

About 106.2 g of a low molecular weight (1500 amu) o-cresol novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 14.9 g propylene glycol methyl etheracetate, was added under ambient conditions to 265.5 g of the cresolnovolac polymer solution. The resulting polymeric solution was thendispensed onto an patterned test wafer, was dispensed from wafer edge tocenter and spun at gradually increased speeds ranging from 100 RPM to2500 RPM. The coated substrate is placed in two hot plates at atemperature of about 160 C and about 200 C for about 90 seconds.

The average film thickness measured was 2.06 micrometers, with astandard deviation of 19 nanometers (0.46% of the average thickness).The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 750 nanometer at wafer center.

Example 5

About 106.2 g of a low molecular weight (950 amu) phenolic novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 7.47 g propylene glycol methyl etheracetate and 7.47 g 2-propanol, was added under ambient conditions to265.5 g of the cresol novolac polymer solution. The resulting polymericsolution was then dispensed onto an patterned test wafer, was dispensedfrom wafer edge to center and spun at gradually increased speeds rangingfrom 100 RPM to 2500 RPM. The coated substrate is placed in two hotplates at a temperature of about 160 C and about 200 C for about 90seconds.

The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 830 nanometers at the wafer center.

Example 6 Comparative

About 106.2 g of a low molecular weight (950 amu) phenolic novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 14.9 g ethyl lactate, was added underambient conditions to 265.5 g of the cresol novolac polymer solution.The resulting polymeric solution was then dispensed onto an patternedtest wafer, was dispensed from wafer edge to center and spun atgradually increased speeds ranging from 100 RPM to 2500 RPM. The coatedsubstrate is placed in two hot plates at a temperature of about 160 Cand about 200 C for about 90 seconds.

The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 900 nanometer at wafer center.

Example 7

About 106.2 g of a low molecular weight (1300 amu) phenolic novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 7.47 g propylene glycol methyl etheracetate and 7.47 g 2-propanol, was added under ambient conditions to265.5 g of the cresol novolac polymer solution. The resulting polymericsolution was then dispensed onto an patterned test wafer, was dispensedfrom wafer edge to center and spun at gradually increased speeds rangingfrom 100 RPM to 2500 RPM. The coated substrate is placed in two hotplates at a temperature of about 160 C and about 200 C for about 90seconds.

Example 7 Comparative

About 106.2 g of a low molecular weight (1300 amu) phenolic novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 14.9 g ethyl lactate, was added underambient conditions to 265.5 g of the cresol novolac polymer solution.The resulting polymeric solution was then dispensed onto an patternedtest wafer, was dispensed from wafer edge to center and spun atgradually increased speeds ranging from 100 RPM to 2500 RPM. The coatedsubstrate is placed in two hot plates at a temperature of about 160 Cand about 200 C for about 90 seconds.

The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 900 nanometer at wafer center.

Example 8 Comparative to Example 2

About 106.2 g of a low molecular weight (1500 amu) o-cresol novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 3.32 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 14.9 g propylene glycol methyl etheracetate and 14.9 g 2-propanol, was added under ambient conditions to265.5 g of the cresol novolac polymer solution. The resulting polymericsolution was then dispensed onto an patterned test wafer, was dispensedfrom wafer edge to center and spun at gradually increased speeds rangingfrom 100 RPM to 2500 RPM. The coated substrate is placed in two hotplates at a temperature of about 160 C and about 200 C for about 90seconds.

The average film thickness measured was 2.03 micrometers, with astandard deviation of 15 nanometers (0.37% of the average thickness).The resultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 200 nanometer at wafer center.

Example 9 Comparative to Example 2

About 106.2 g of a low molecular weight (1500 amu) o-cresol novolacpolymer was dissolved 159.4 g of propylene glycol methyl ether acetateto yield 265.6 g of a cresol novolac solution. 1.66 g of afluoroaliphatic polymeric ester surfactant solution with a molecularweight of about 5500-8500 amu, and 9.7 g propylene glycol methyl etheracetate and 5 g 2-propanol, was added under ambient conditions to 265.5g of the cresol novolac polymer solution. The resulting polymericsolution was then dispensed onto an patterned test wafer, was dispensedfrom wafer edge to center and spun at gradually increased speeds rangingfrom 100 RPM to 2500 RPM. The coated substrate is placed in two hotplates at a temperature of about 160 C and about 200 C for about 90seconds.

The average film thickness measured was 2.1 micrometers, with a standarddeviation of 15 nanometers (0.36% of the average thickness). Theresultant coated wafer measured thickness uniformity with disparitybetween topography and open area of 480 nanometer at wafer center.

Example 10

Example 10 shows a comparison study between a novolac-based polymercomposition, such as those described herein (Accuflo™ 2025) and a secondnovolac-based polymer composition, also similar to those describedherein (Accuflo™ 2027 and/or T2027). Along with the novolac-basedpolymer (structural constituent), Accuflo™ 2025 comprises 90% PGMEA and10% ethyl lactate as a solvent system. In addition, along with thenovolac-based polymer (structural constituent), Accuflo™ 2027 comprises92% PGMEA and 8% 2-propanol.

FIG. 1 shows the fluid property comparison from solution for the twocompositions at about room temperature (RT) and about 40° C. It can beseen in this Figure that the Accuflo™ 2027 composition reduces theapparent viscosity by about 25% because of the minor composition changein solvent system.

FIGS. 2 and 3, along with Table 1, shows the structural information forthe composition once the starting composition has been deposited onto asurface or wafer and baked and/or cured. The aging experiments wereconducted at about room temperature and at about 40° C. The Cauchycoefficient for Accuflo™ 2027 were calculated when this composition wasbaked at about 160° C.-200° C. for about 120 seconds in air. Thecoefficients that were valid for the wavelength (λ) range from about3500 Å to about 10,000 Å were as follows:

-   -   A(n)=1.552    -   B(n)=1.76E+6 Å²    -   C(n)=1.90E+12 Å⁴

The refractive index is calculated in the valid wavelength range usingthe folio formula:n(lambda)=A(n)+B(n)/lambda² +C(n)/lambda⁴

The thickness of the Accuflo™ 2027 was about 20347 Å. The thickness ofthe Accuflo™ 2025 in the comparison study was measured to be about 19782Å. In the comparison study, the coefficients that were valid forAccuflo™ 2025 were:

-   -   A(n)=1.588    -   B(n)=1.24E+6 Å²    -   C(n)=2.34E+12 Å⁴

FIGS. 4 and 5, along with Tables 2-7 show the planarization performancefor the Accuflo™ 2025 composition tested in two different laboratories.FIGS. 6 and 7, along with Tables 8-13 show the planarization performancefor the Accuflo™ 2027 composition tested in two different laboratories.

Table 14 shows the TMAH solvent resistance of the Accuflo™ 2027 whenbaked at about 160° C. to about 230° C. for about 90 seconds in ambientair. This solvent resistance is identical for all practical purposes tothe solvent resistance for Accuflo™ 2025.

FIG. 8 shows that both Accuflo™ 2025 and Accuflo™ 2027 have comparableplasma etch rates. A planarization comparison between the twocompositions is shown in Table 15.

FIGS. 9 and 10 show fill and planarization data collected for theAccuflo™ 2027 composition. FIG. 9 shows the scan path 900, thetopography—deep trench arrays 910 and the periphery 920. FIG. 10 shows aschematic of the wafer center 1010 and the wafer edge 1020. Profilometerscan path and two wafer locations were used for this evaluation. Twowafers were used. Analysis of the SEM cross sections were made at threelocations: center, mid-wafer and at the edge. FIG. 11 shows theprofilometer results. Table 16 shows the SEM cross section results, andTable 17 shows the BOE etch results for this same composition. Accuflo™2027 achieves complete resistance to BOE (500:1) at all bake conditionsunder study. High bake temperatures of 160° C. (100 s)-190° C. (100s)-200° C. (210 s) is a preferred embodiment to further crosslinkpolymeric film when concentrated HF etchant is used.

Several conclusions can be drawn from this Example, including thefollowing:

-   -   With standard spin process, Accuflo™ 2027 presents superior        planarization properties as compared to Accuflo™ 2025 because of        reduced viscosity and interfacial surface tension.    -   Following process development on Accuflo™ 2025, a contemplated        process has been implemented for Accuflo™ 2027 to maximize        trench fill property, which comprises gradually increase spin        method with and without the radial dispense approach and surface        conditioning with PGMEA. Greater than 70% enhancement in local        and global planarization has been achieved. The thickness bias        between trench arrays and support area have been reduced to 250        nm at wafer center and 150 nm at wafer edge.    -   Bulk film characterization has been conducted on Accuflo™ 2027        and Accuflo™ 2025. Comparable structural (molecular        characteristics), physical, process (solvent resistance and        plasma etch performance) and optical properties have been        observed between the two compositions.    -   Superior global and local planarization in the deep trench        arrays/buffer capacitor area can be achieved by application of        Accuflo™ 2027 using contemplated spin processes with bake        temperatures of about 160° C. (about 90 s)-about 220° C. (about        90 s) in air ambient. Another optimum bake range is from about        160° C. (about 90 s)-about 180° C. (about 90 s) in air ambient,        which leads to moderate crosslinking, and from about 160° C.        (about 100 s)-to about 180° C. (about 100 s)-to about 200° C.        (about 210 s) in air ambient, which leads to high crosslinking.

Thus, specific embodiments, methods of formation and applications ofmodified planarization compositions have been disclosed. It should beapparent, however, to those skilled in the art that many moremodifications besides those already described are possible withoutdeparting from the inventive concepts herein. The inventive subjectmatter, therefore, is not to be restricted except in the spirit of thedisclosure herein. Moreover, in interpreting the specification andclaims, all terms should be interpreted in the broadest possible mannerconsistent with the context. In particular, the terms “comprises” and“comprising” should be interpreted as referring to elements, components,or steps in a non-exclusive manner, indicating that the referencedelements, components, or steps may be present, or utilized, or combinedwith other elements, components, or steps that are not expresslyreferenced.

1. A film comprising a planarization composition wherein theplanarization composition consists of: an o-cresol-based polymercompound and a resol phenolic resin; at least one surfactant; and asolvent system consisting of at least one solvent, wherein at least someof the solvent system is removed.
 2. A layered component, comprising: asubstrate having a surface topography; and a planarization compositionconsisting of: an o-cresol-based polymer compound and a resol phenolicresin; at least one surfactant; and a solvent system consisting of atleast one solvent, and wherein the composition is coupled to thesubstrate.
 3. The layered component of claim 2, further comprising atleast one additional layer of material or film.
 4. A layered component,comprising: a substrate having a surface topography; and a layercomprising the film of claim 1, wherein the layer is coupled to thesubstrate.
 5. The layered component of claim 4, further comprising atleast one additional layer of material or film.
 6. A method of forming afilm, comprising: providing a planarization composition consisting of:an o-cresol-based polymer compound and a resol phenolic resin; at leastone surfactant; and a solvent system consisting of at least one solvent,and evaporating at least part of the solvent system to form a film. 7.The method of claim 6, wherein evaporating at least part of the solventsystem comprises applying a continuous source to the planarizationcomposition.
 8. The method of claim 7, wherein the continuous sourcecomprises a heat source.
 9. The method of claim 8, wherein thecontinuous source comprises an infrared source, an ultraviolet source,an electron-beam source and combinations thereof.